2sd2583 transistor (npn) features power dissipation p cm : 1 w (tamb=25 ) collector current i cm : 5 a collector-base voltage v (br)cbo : 30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 0.1 ma, i e =0 30 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 30 v emitter-base breakdown voltage v (br)ebo i e = 0.1m a, i c =0 6 v collector cut-off current i cbo v cb = 30 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 6 v, i c =0 0.1 a h fe(1) v ce = 2 v, i c =1a 150 600 dc current gain h fe(2) v ce = 2 v, i c = 4 a 50 collector-emitter saturation voltage v ce(sat) i c = 1 a, i b =50ma i c =2a, i b =100ma i c = 4 a, i b =200ma 0.15 0.25 0.5 v base-emitter saturation voltage v be(sat) i c =2a, i b =100ma 1.5 v transition frequency f t v ce = 10 v, i c = 50 ma 120 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 77 pf 1 2 3 TO-126 1. emitter 2. collector 3. base 2sd2583 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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